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Si7726DN
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0095 at V GS = 10 V
0.0125 at V GS = 4.5 V
I D (A) e
35
35
Q g (Typ.)
12.5 nC
? Halogen-free
? SkyFET Monolithic TrenchFET ? Power
MOSFET and Schottky Diode
? Low Thermal Resistance PowerPAK ?
RoHS
COMPLIANT
Package with Small Size and Low 1.07 mm Profile
? 100 % R g Tested
PowerPAK 1212-8
APPLICATIONS
? DC/DC Converter
3.30 mm
1
S
2
S
3
S
3.30 mm
G
- Notebook
- POL
D
4
D
8
7
D
D
6
5
D
G
Schottky Diode
Bottom V ie w
Orderin g Information: Si7726D N -T1-GE3 (Lead (P b )-free and Halogen-free)
N -Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
35 e
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
I D
I DM
I S
35 e
14.9 a, b
11.8 a, b
60
35 e
5.4 a, b
A
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I AS
E AS
20
20
mJ
T C = 25 °C
52
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
33
3.8 a, b
W
T A = 70 °C
2.4 a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c, d
T J , T stg
- 50 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile ( h ttp://www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 68600
S-81737-Rev. B, 04-Aug-08
www.vishay.com
1
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